1 Amp Schottky Rectifier

1 Amp Schottky Rectifier ● Schottky Barrier Rectifier ● Guard Ring Protection ● Low Forward Voltage ● High Reliability ● High Current Capability

文件：115.13 Kbytes 页数：3 Pages

Microsemi

美高森美

1.0 Ampere Schottky Barrier Rectifiers

Features • 1.0 ampere operation at TA = 90°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications.

文件：36.22 Kbytes 页数：2 Pages

Fairchild

仙童半导体

1.0 Ampere Schottky Barrier Rectifiers

Features • 1.0 ampere operation at TA = 90°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications.

文件：109.41 Kbytes 页数：3 Pages

Fairchild

仙童半导体

Axial Lead Rectifiers

Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−volt

文件：75.98 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Schottky Barrier Rectifiers

FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in    accordance to WEEE 2002/96/EC

文件：36.79 Kbytes 页数：2 Pages

VishayVishay Siliconix

威世威世科技公司

Axial Lead Rectifiers SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS

This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency

文件：249.43 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Schottky barrier diodes

DESCRIPTION The 1N5817 to 1N5819 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating Implotec™(1) technology. FEATURES • Low switching losses • Fast recovery time • Guard ring protected • Hermetically s

文件：37.43 Kbytes 页数：9 Pages

PHI

飞利浦

Schottky Rectifier, 1.0 A

DESCRIPTION The 1N5817 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. FEATURES • Low profile, axial leaded outline

文件：90.3 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世威世科技公司

Schottky Barrier Rectifier

文件：58.98 Kbytes 页数：1 Pages

Central

1.0A SCHOTTKY BARRIER RECTIFIER

Features ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application ● Lead F

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DIODES

美台半导体