PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated

VDSS = 500 V ID25 = 16 A RDS(on) ≤ 400 mΩ Features Unclamped Inductive Switching (UIS) rated International standard packages Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density

文件：148.85 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

文件：283.2 Kbytes 页数：2 Pages

ISC

无锡固电

N通道标准MOSFET

• 国际标准包装 \n• 动态dv/dt评级\n• 较低的RDS(on)和Qg\n• 雪崩评级\n• 较低的封装电感;

Littelfuse

力特

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES • VDSS(Min.)= 500V, ID= 17A • Drain-Source ON Res

文件：83.67 Kbytes 页数：7 Pages

KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES • VDSS(Min.)= 500V, ID= 17A • Drain-Source ON Res

文件：83.67 Kbytes 页数：7 Pages

KEC

KEC(Korea Electronics)

N-Channel MOSFET 500V, 16.0 A, 0.35(ohm)

文件：1.32602 Mbytes 页数：8 Pages

MGCHIP