KF16N50P

N CHANNEL MOS FIELD EFFECT TRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES •VDSS(Min.)=500V,ID=17A •Drain-SourceONRes

MDF16N50G

N-ChannelMOSFET500V,16.0A,0.35(ohm)

MDF16N50GTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=16A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.35Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

MDF16N50GTH

N-ChannelMOSFET500V,16.0A,0.35(ohm)

MDP16N50G

N-ChannelMOSFET500V,16.0A,0.35(ohm)

MDP16N50GTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=16A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.35Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

MDP16N50GTH

N-ChannelMOSFET500V,16.0A,0.35(ohm)

MDQ16N50G

N-ChannelMOSFET500V,16.5A,0.35(ohm)

MDQ16N50GTH

N-ChannelMOSFET500V,16.5A,0.35(ohm)

MDQ16N50GTP

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=16.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.35Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC