1.2 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in pow

文件：143.99 Kbytes 页数：8 Pages

UTC

友顺

Silicon Avalanche Diodes - 1500 Watt Metal Axial Leaded Transient Voltage Suppressors

FEATURES • Hermetically sealed • Breakdown voltage range 6.8 - 200 volts • Glass passivated junction • Excellent clamping capability • Low zener impedance • 100 surge tested • -55°C to +150°C • Bi-directional MAXIMUM RATING • Peak Pulse Power (Ppk): 15000 Watts (10 x 1000µs)@25°C (see di

文件：197.55 Kbytes 页数：4 Pages

Littelfuse

力特

Schottky Barrier Rectifier

Features • High Reliability • Low Reverse Current and Low Forward Voltage · Marking : Cathode band and type number • Lead Free Finish/Rohs Compliant (Note1) (PSuffix designates Compliant. See ordering information) • Moisture Sensitivity Level 1 Maximum Ratings • Storage &

文件：419.26 Kbytes 页数：3 Pages

MCC

Schottky Barrier Diodes SMALL SIGNAL SCHOTTKY DIODES 30m/50m AMPERES 40/45VOLTS

Features: * High Reliability * Low Reverse Current and Low Forward Voltage Applications: * Low Current Rectification and High Speed Switching

文件：239.88 Kbytes 页数：2 Pages

WEITRON

SMALL SIGNAL SCHOTTKY DIODE

VOLTAGE RANGE: 40V CURRENT: 0.03 A FEATURES Metal sillicon junction m ajority carrier conduction High current capability,low forward voltage drop Extremely low reverse current IR Ultra speed switching characteristics Small temperature coefficient of forward characteristics

文件：51.09 Kbytes 页数：2 Pages

BILIN

银河微电

GERMANIUM DIODES

Features · Metal silicon junction, majority carrier conduction · High current capability, Low forward voltage drop · Extremely low reverse current lR · Ultra speed switching characteristics · Small temperature coefficient of forward characteristics · Satisfactory Wave detection e

文件：310.86 Kbytes 页数：2 Pages

DAESAN

SMALL SIGNAL SCHOTTKY DIODE

FEATURES ● Metal-on-silicon junction, majority carrier conduction ● High current capability, Low forward voltage drop ● Extremely low reverse current Ir ● Ultra speed switching characteristics ● Small temperature coefficient of forward characteristics ● Satisfactory Wave detectio

文件：947.3 Kbytes 页数：2 Pages

DIOTECH

GOLD BONDED GERMANIUM DIODE

Germanium Glass Diode Features • Germanium Glass Diode • RoHS Compliance

文件：71.1 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

JEDEC DO-7 PACKAGE

JEDEC DO-7 PACKAGE

文件：41.79 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Schottky Barrier Diode

Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar

文件：80.99 Kbytes 页数：2 Pages

FORMOSA

美丽微半导体