Fast Switching

• DESCRITION • Designed for high efficiency switch mode power supply. • FEATURES • Drain Current –ID= 1A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 8Ω (Max) • Avalanche Energy Specified • Fast Switching • Simple Drive Requireme

文件：110.55 Kbytes 页数：2 Pages

ISC

无锡固电

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • Metal-on-silicon junction, majority carrier conduction • High current capability, Low forward voltage drop • Extremely low reverse current IR • Ultra speed switching characteristics • Small temperature coefficient of forward characteristics • Satisfactory wave detection efficiency

文件：72.86 Kbytes 页数：3 Pages

JINANJINGHENG

晶恒集团

Low forward voltage drop - low power consumption

FEATURES Low forward voltage drop - low power consumption Thirty years of proven reliability - one million hours mean time between failures (MTBF) Very low noise level Metallurgically bonded

文件：75.67 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SMALL SIGNAL SCHOTTKY DIODES

Reverse Voltage - 40 to 45 Volts Forward Current - 0.03/0.05 Amperes FEATURES Fast switching for high efficiency Low reverse leakage High forward surge current capability High temperature soldering guaranteed 250 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension

文件：1.04021 Mbytes 页数：2 Pages

SY

顺烨电子

600V N-Channel MOSFET

Features • High Reliability • Low Reverse Current and Low Forward Voltage · Marking : Cathode band and type number • Moisture Sensitivity: Level 1 per J-STD-020C Maximum Ratings • Storage &Operating JunctionTemperature: -65℃ to +125℃

文件：127.55 Kbytes 页数：1 Pages

TGS

Schottky Barrier Rectifier

Features • High Reliability • Low Reverse Current and Low Forward Voltage · Marking : Cathode band and type number • Moisture Sensitivity: Level 1 per J-STD-020C Maximum Ratings • Storage &Operating JunctionTemperature: -65℃ to +125℃

文件：138.98 Kbytes 页数：2 Pages

TGS

Small Signal Schottky Diodes

VOLTAGE RANGE: 40V CURRENT: 0.03 A DO - 35(GLASS) FEATURES Metal sillicon junction m ajority carrier conduction High current capability,low forward voltage drop Extremely low reverse current IR Ultra speed switching characteristics Small temperature coefficient of forward

文件：141.56 Kbytes 页数：2 Pages

LUGUANG

鲁光电子

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • Metal-on-silicon junction, majority carrier conduction • High current capability, Low forward voltage drop • Extremely low reverse current IR • Ultra speed switching characteristics • Small temperature coefficient of forward characteristics • Satisfactory wave detection efficiency

文件：454.91 Kbytes 页数：3 Pages

GXELECTRONICS

星合电子

SMALL SIGNAL SCHOTTKY DIODE

FEATURES ◇ Metal silicon junction majority carrier conduction ◇ High current capability,low forward voltage drop ◇ Extremely low reverse current IR ◇ Ultra speed switching characteristics ◇ Small temperature coefficient of forward characteristics ◇ Satisfactory wave detection efficiency ◇ F

文件：274.64 Kbytes 页数：2 Pages

DSK

Hermetically Sealed Glass Case Point Contact Germanium Diode

PRODUCT FEATURE 1N60 is a point contact diode employing N-from Germanium and gives an efficient and excellent linearity when used in TV image detection, FM detection, radio, AM detection, etc.

文件：3.55111 Mbytes 页数：2 Pages

THINKISEMI

思祁半导体