N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.08649 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-CHANNEL MOSFET

DESCRIPTION 1N60 1N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power su

文件：434.49 Kbytes 页数：6 Pages

ZSELEC

淄博圣诺

N-Channel Power MOSFET

DESCRIPTION They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. The Nell 1N60 is a three-terminal silicon device with current conduction capability of 1.2A, fast switc

文件：623.4 Kbytes 页数：8 Pages

NELLSEMI

尼尔半导体

45V Detection switch tube

文件：365.394 Kbytes 页数：2 Pages

SUNMATE

森美特

PDF上传者：深圳冠荣电子有限公司

SMALL SIGNAL SCHOTTKY DIODES

文件：365.313 Kbytes 页数：2 Pages

SUNMATE

森美特

PDF上传者：深圳冠荣电子有限公司

Small Signal Schottky Diodes

文件：123.63 Kbytes 页数：2 Pages

YANGJIE

扬杰电子

N-CHANNEL MOSFET

文件：395.7 Kbytes 页数：8 Pages

ARTSCHIP

SMALL SIGNAL SCHOTTKY DIODES

文件：1.03992 Mbytes 页数：2 Pages

SHUNYE

顺烨电子

1.2 Amps, 600/650 Volts N-CHANNEL MOSFET

文件：275.21 Kbytes 页数：6 Pages

UTC

友顺

1.2A, 600V N-CHANNEL POWER MOSFET

文件：282.69 Kbytes 页数：6 Pages

UTC

友顺