1SS184

Marking：B3；Package：SOT-23；Surface mount switching diode

FEATURES ●LowforwardvoltageVF=0.9V(typ). ●Smalltotalcapacitance. ●Fastreverserecoverytime:trr=1.6ns(typ). APPLICATIONS ●Highspeedswitchingapplication.

1SS184

SILICON EPITAXIAL PLANAR DIODE

Features •Smallpackage •Lowforwardvoltage •Fastreverserecoverytime •Smalltotalcapacitance Applications •Ultrahighspeedswitchingapplication

1SS184

Surface Mount Switching Diodes 100m AMPERES 80 VOLTS

SWITCHINGDIODE100mAMPERES80VOLTS Features: *FastSwitchingSpeed *SurfaceMountPackageIdeallySuitedforAutomaticInsertion *HighConductance *ForGeneralPurposeSwitchingApplications

1SS184

Switching Diode

FEATURES ●Lowforwardvoltage ●Fastreverserecoverytime

1SS184

ULTRA HIGH SPEED SWITCHING APPLICATION

Features ●SmallPackage ●Lowforwardvoltage:VF(3)=0.9V(Typ.) ●FastReverseRecoveryTime:trr=1.6ns(Typ.) ●SmallTotalCapacitance:CT=0.9pF(Typ.)

1SS184

150mW High Speed Switching Diodes 80 Volt

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LowForwardVoltage •LowLeakageCurrent •SurfaceMountSOT-23Package •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1

1SS184

DIODE (ULTRA HIGH SPEED SWITCHING APLICATION)

UltraHighSpeedSwitchingApplication ●Smallpackage:SC-59 ●Lowforwardvoltage:VF(3)=0.9V(typ.) ●Fastreverserecoverytime:trr=1.6ns(typ.) ●Smalltotalcapacitance:T=2.2pF(typ.)

1SS184

Surface mount switching diode

■Features ●VR80V ●IO100mA ■Applications ●Highspeedswitchingapplication ●Lowforwardvoltage

1SS184

Marking：B3；Package：SOT-23；Switching Diode

Features ●SmallPackage ●Lowforwardvoltage:VF(3)=0.9V(Typ.) ●FastReverseRecoveryTime:trr=1.6ns(Typ.) ●SmallTotalCapacitance:CT=0.9pF(Typ.)

1SS184

SOT-23 Plastic-Encapsulate Diodes

SWITCHINGDIODE FEATURES Powerdissipation PD:150mW(Tamb=25℃) ForwardCurrent IF:100mA ReverseVoltage VR:80V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃