1SS184

Surface mount switching diode

FEATURES ●Lowforwardvoltage VF(3)=0.9V(typ). ●Fastswitching. ●Fastreverserecoverytime:trr=1.6ns(typ) APPLICATIONS ●Highspeedswitchingapplication.

1SS184

Switching Diodes

Features ◇Lowforwardvoltage:VF(3)=0.9V(typ.) ◇Fastreverserecoverytime:trr=1.6ns(typ.)

1SS184

SOT-23 Plastic-Encapsulate Diodes

SwitchingDiodes Features ●Lowforwardvoltage ●Fastreverserecoverytime Applications ●Extremefastswitches

1SS184

SOT-23 Plastic-Encapsulate DIODE

SOT-23Plastic-EncapsulateDIODE Features Powerdissipation PD:150mW(Tamb=25°C) ForwardCurrent IF:100mA ReverseVoltage VR:80V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55°Cto+150°C

1SS184

Switching Diode

SwitchingDiode FEATURES ●Lowforwardvoltage ●Fastreverserecoverytime

1SS184

Switching Diode

FEATURES ●Lowforwardvoltage ●Fastreverserecoverytime

1SS184

Ultra High Speed Switching

Featrues ●Lowforwardvoltage:VF(3)=0.9V(typ.) ●Fastreverserecoverytime:trr=1.6ns(typ.) ●Smalltotalcapacitance:CT=0.9pF(typ.) ●WedeclarethatthematerialofproductcompliancewithRoHSrequirements. ●RoHSproductforpackingcodesuffixG Halogenfreeproduct

1SS184

Plastic-Encapsulate Diodes

SWITCHINGDIODES FEATURES Lowforwardvoltage:VF(3)=0.9V(typ.) Fastreverserecoverytime:trr=1.6ns(typ.)

1SS184

Marking：B3；Package：SOT-23；Switching DIODES

FEATURES •Lowforwardvoltage:VF(3)=0.9V(typ.) •Fastreverserecoverytime:trr=1.6ns(typ.)

1SS184

Marking：A4；Package：SOT-23；Silicon Epitaxial Planar Switching Diode

Features •Smallpackage •Lowforwardvoltage •Fastreverserecoverytime •Smalltotalcapacitance