1PS301

Marking：B3；Package：SC-70；Dual high-speed switching diode

Featuresandbenefits Highswitchingspeed:trr4ns Repetitivepeakreversevoltage: VRRM85V Reversevoltage:VR80V AEC-Q101qualified Lowcapacitance:Cd1.5pF Repetitivepeakforwardcurrent: IFRM500mA VerysmallSMDplasticpackage

1SS184

Marking：B3；Package：SOT-23；Surface mount switching diode

FEATURES ●LowforwardvoltageVF=0.9V(typ). ●Smalltotalcapacitance. ●Fastreverserecoverytime:trr=1.6ns(typ). APPLICATIONS ●Highspeedswitchingapplication.

1SS184

Marking：B3；Package：SOT-23；Switching Diode

Features ●SmallPackage ●Lowforwardvoltage:VF(3)=0.9V(Typ.) ●FastReverseRecoveryTime:trr=1.6ns(Typ.) ●SmallTotalCapacitance:CT=0.9pF(Typ.)

1SS184

Marking：B3；Package：SOT-23；Switching DIODES

FEATURES •Lowforwardvoltage:VF(3)=0.9V(typ.) •Fastreverserecoverytime:trr=1.6ns(typ.)

1SS184W-CAR

Marking：B3；Package：SOT-323；Silicon Epitaxial Planar Switching Diode

FEATURES Lowforwardvoltage Fastreverserecoverytime -CARforautomotiveandotherapplications requiringuniquesiteandcontrolchange requirements;AEC-Q101qualifiedandPPAP capable

74AVC2T245GU-Q100

Marking：B3；Package：XQFN10；2-bit dual supply translating transceiver with configurable voltage translation; 3-state

1.Generaldescription The74AVC2T245-Q100isa2-bit,dualsupplytransceiverthatenablesbidirectionallevel translation.Thedevicecanbeusedastwo1-bittransceiversorasa2-bittransceiver.Itfeatures two2-bitinput-outputports(AnandBn)anddirectioncontrolinputs(DIRn),ano

ACDBUC0130-HF

Marking：B3；Package：SOD-523F；SMD Schottky Barrier Diode

Features -Lowforwardvoltage. -Designedformountingonsmallsurface. -Extremelythinpackage. -Majoritycarrierconduction. -AEC-Q101Qualified&PPAP.

BC69PA

Marking：B3；Package：HUSON3；20 V, 2 A PNP medium power transistors

Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified

BC817-16QB

Marking：B3；Package：DFN1110D-3；45 V, 500 mA NPN general-purpose transistors

Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •AEC-Q101qualified

BC817-16QB-Q

Marking：B3；Package：DFN1110D-3；45 V, 500 mA NPN general-purpose transistors

Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •Qualifiedaccordingto