PESD5V0U1BB-Q

Marking：B3；Package：SC-79；Low capacitance bidirectional ESD protection diode

1.Generaldescription LowcapacitancebidirectionalElectroStaticDischarge(ESD)protectiondiodeinaultra-smalland flatleadSOD523plasticpackagedesignedtoprotectonesignallinefromthedamagecausedby ESDandothertransients. 2.Featuresandbenefits •BidirectionalESDprot

PTVS20VP1UP

Marking：B3；Package：SOD128；600 W Transient Voltage Suppressor

1.1Generaldescription 600WunidirectionalTransientVoltageSuppressor(TVS)inaSOD128smallandflatlead Surface-MountedDevice(SMD)plasticpackage,designedfortransientovervoltage protection. 1.2Featuresandbenefits 1.3Applications Powersupplyprotection Automotiveapplic

PTVS20VP1UP-Q

Marking：B3；Package：SOD128；600 W Transient Voltage Suppressor

1.Generaldescription 600WunidirectionalTransientVoltageSuppressor(TVS)inaSOD128smallandflatleadSurface- MountedDevice(SMD)plasticpackage,designedfortransientovervoltageprotection. 2.Featuresandbenefits •Ratedpeakpulsepower:PPPM=600W •Reversestandoffvolta

PTVS60VS1UR

Marking：B3；Package：SOD123W；400 W Transient Voltage Suppressor

1.1Generaldescription 400WunidirectionalTransientVoltageSuppressor(TVS)inaSOD123Wsmallandflat leadlow-profileSurface-MountedDevice(SMD)plasticpackage,designedfortransient overvoltageprotection. 1.2Featuresandbenefits 1.3Applications Powersupplyprotection Auto

PTVS60VS1UR-Q

Marking：B3；Package：SOD123W；400 W Transient Voltage Suppressor

1.Generaldescription 400WunidirectionalTransientVoltageSuppressor(TVS)inaSOD123Wsmallandflatlead Surface-MountedDevice(SMD)plasticpackage,designedfortransientovervoltageprotection. 2.Featuresandbenefits •Ratedpeakpulsepower:PPPM=400W(350Wfor3V3) •Reve

PUMB1

Marking：B3；Package：SC-88；PNP/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

Featuresandbenefits 100mAoutputcurrentcapability Built-inbiasresistors Simplifiescircuitdesign Reducescomponentcount Reducespickandplacecosts AEC-Q101qualified

PUMD30

Marking：B3；Package：TSSOP6；50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = open

1.Generaldescription NPN/PNPdoubleResistor-EquippedTransistor(RET)inaverysmallSOT363(SC-88)Surface- MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PUMH30 PNP/PNPcomplement:PUMB30 2.Featuresandbenefits •100mAoutputcurrentcapability •Built-inbiasresistor

PUMD30

Marking：B3；Package：SC-88；NPN/PNP double resistor-equipped transistors; R1 = 2.2 kW, R2 = open

Features *100mAoutputcurrentcapability *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts

TLV707115DQNR

Marking：B3；Package：X2SON；TLV707, TLV707P 200-mA, Low-IQ, Low-Noise, Low-Dropout Regulator for Portable Devices

1Features •Typicalaccuracy:0.5 •Supports200-mAoutput •LowIQ:25μA •Fixed-outputvoltagecombinationspossiblefrom 0.85Vto5.0V(1) •HighPSRR: –70dBat100Hz –50dBat1MHz •Stablewitheffectivecapacitanceof0.1μF(2) •Thermalshutdownandovercurrentprotection

TLV707115DQNR

Marking：B3；Package：X2SON；TLV707, TLV707P 200-mA, Low-IQ, Low-Noise, Low-Dropout Regulator for Portable Devices

1Features •Typicalaccuracy:0.5 •Supports200-mAoutput •LowIQ:25μA •Fixed-outputvoltagecombinationspossiblefrom 0.85Vto5.0V(1) •HighPSRR: –70dBat100Hz –50dBat1MHz •Stablewitheffectivecapacitanceof0.1μF(2) •Thermalshutdownandovercurrentprotection