丝印：B31；Package：SMB；100 V, 3 A Schottky rectifier

文件：204.47 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

丝印：B3100AG；Package：SMA；Surface Mount Schottky Barrier Rectifier

Reverse Voltage - 20 to 200 V Forward Current - 3.0A Features • Metal silicon junction, majority carrier conduction • For surface mounted applications • Low power loss, high efficiency • High forward surge current capability • For use in low voltage, high frequency inverters, free wheeli

文件：1.41158 Mbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：B3120AG；Package：SMA；Surface Mount Schottky Barrier Rectifier

Reverse Voltage - 20 to 200 V Forward Current - 3.0A Features • Metal silicon junction, majority carrier conduction • For surface mounted applications • Low power loss, high efficiency • High forward surge current capability • For use in low voltage, high frequency inverters, free wheeli

文件：1.41158 Mbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：B3150AG；Package：SMA；Surface Mount Schottky Barrier Rectifier

Reverse Voltage - 20 to 200 V Forward Current - 3.0A Features • Metal silicon junction, majority carrier conduction • For surface mounted applications • Low power loss, high efficiency • High forward surge current capability • For use in low voltage, high frequency inverters, free wheeli

文件：1.41158 Mbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：B3100；Package：F3-D；SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

FEATURES • Very low profile package • High efficiency • Extremely fast switching • Negligible switching losses • Low forward voltage drop, low power loss • Qualified to AEC-Q101 Rev_C • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) A

文件：334.43 Kbytes 页数：4 Pages

DIODES

美台半导体

丝印：B3100；Package：F3-D；SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

FEATURES • Very low profile package • High efficiency • Extremely fast switching • Negligible switching losses • Low forward voltage drop, low power loss • Qualified to AEC-Q101 Rev_C • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) A

文件：334.43 Kbytes 页数：4 Pages

DIODES

美台半导体

丝印：B3115；Package：PRPAK3X3；P-Ch 30V Fast Switching MOSFETs

Description The FKBB3115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKBB3115 meet the RoHS and Green Product requirement 100 EAS guaranteed with full function reliability approved

文件：1.01751 Mbytes 页数：6 Pages

FETEK

台湾东沅

丝印：B3103；Package：DFN3X3；P-Channel Enhancement Mode Power MOSFET

General Features VDS = -30V,ID = -32A RDS(ON)

文件：537.64 Kbytes 页数：9 Pages

RECTRON

丝印：B3105；Package：DFN3x3EP；P-Channel Enhancement Mode Power MOSFET

General Features VDS =-30V,ID =-42A RDS(ON)

文件：396.09 Kbytes 页数：9 Pages

RECTRON

丝印：B31Y；Package：SMB；Automotive 100 V, 3 A power Schottky rectifier

文件：206.97 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体