1SS321

DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)

Low-VoltageHigh-SpeedSwitching ●AEC-Q101Qualified(Note1) ●Lowforwardvoltage:VF(2)=0.42V(typ.) ●Lowreversecurrent:IR=500nA(max) ●Smallpackage:SC-59

1SS321

LOW VOLTAGE HIGH SPEED SWITCHING

Features ●Lowforwardvoltage:VF=0.42V(Typ) ●Lowreversecurrent:IR=500nA(Max) ●Smallpackag:SC-59(SOT-23MOD)

1SS321

SILICON EPITAXIAL SCHOTTKY BARRIER DIODE

Forlowvoltagehighspeedswitchingapplication Features •Lowforwardvoltage •Lowreversecurrent

1SS321

Low-Voltage High-Speed Switching

Low-VoltageHigh-SpeedSwitching ●AEC-Q101Qualified(Note1) ●Lowforwardvoltage:VF(2)=0.42V(typ.) ●Lowreversecurrent:IR=500nA(max) ●Smallpackage:SC-59

1SS321

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS321TE85LF

Low-Voltage High-Speed Switching

Low-VoltageHigh-SpeedSwitching ●AEC-Q101Qualified(Note1) ●Lowforwardvoltage:VF(2)=0.42V(typ.) ●Lowreversecurrent:IR=500nA(max) ●Smallpackage:SC-59

1SS321_07

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS321,LF

包装：卷带（TR）剪切带（CT） 封装/外壳：TO-236-3，SC-59，SOT-23-3 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SMALL SIGNAL SCHOTTKY BARRIER DI

Toshiba Semiconductor and Storage