isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.35Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：331.93 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET 500V, 16.0 A, 0.35(ohm)

文件：1.32602 Mbytes 页数：8 Pages

MGCHIP

500V N-Ch MOSFET

MagnaChip

美格纳

N-Channel MOSFET 500V, 16.5A, 0.35(ohm)

文件：871.26 Kbytes 页数：6 Pages

MGCHIP

N-Channel MOSFET 500V, 16.5A, 0.35(ohm)

文件：871.26 Kbytes 页数：6 Pages

MGCHIP

N-Channel MOSFET 500V, 16.5A, 0.35(ohm)

文件：871.26 Kbytes 页数：6 Pages

MGCHIP