1SS294

SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

Features •Smallsurfacemountingtype •Lowreversecurrent •Lowforwardvoltage

1SS294

LOW VOLTAGE HIGH SPEED SWITCHING

Features •Smallpackage •Lowforwardvoltage:VF(3)=0.54V(Typ). •Lowreversecurrent:IR=5A(Max).

1SS294

Low Voltage High Speed Switching

LowVoltageHighSpeedSwitching •Lowforwardvoltage:VF(3)=0.54V(typ.) •Lowreversesurrent:IR=5μA(max) •Smallpackage:SC−59

1SS294

DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)

LowVoltageHighSpeedSwitching •Lowforwardvoltage:VF(3)=0.54V(typ.) •Lowreversesurrent:IR=5μA(max) •Smallpackage:SC−59

1SS294

Low Voltage High Speed Switching

1SS294T5LFT

Low Voltage High Speed Switching

LowVoltageHighSpeedSwitching •Lowforwardvoltage:VF(3)=0.54V(typ.) •Lowreversesurrent:IR=5μA(max) •Smallpackage:SC−59

1SS294_07

Low Voltage High Speed Switching

1SS294_13

Surface Mount Schottky Barrier Diode 150 mWatt

1SS294,LF

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：TO-236-3，SC-59，SOT-23-3 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 40V 100MA SMINI

Toshiba Semiconductor and Storage