丝印：12M1H040；Package：PG-TO247-3-STD-N2.5；CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET

Features • VDSS = 1200 V at Tvj = 25°C • IDCC = 55 A at Tvj = 25°C • RDS(on) = 39 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Short circuit withstand time 3 µs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage ca

文件：1.38658 Mbytes 页数：17 Pages

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丝印：12M1H060；Package：PG-TO247-4；CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

Features  Very low switching losses  Threshold-free on state characteristic  Benchmark gate threshold voltage, VGS(th) = 4.5V  0V turn-off gate voltage for easy and simple gate drive  Fully controllable dV/dt  Robust body diode for hard commutation  Temperature independent turn-off s

文件：1.27807 Mbytes 页数：17 Pages

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丝印：12M1H007；Package：PG-TO247-4-STD-T3.7；CoolSiC??1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology

Features • VDSS = 1200 V at Tvj = 25°C • IDCC = 225 A at Tvj = 25°C • RDS(on) = 7 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied • Robust body diode for

文件：1.35906 Mbytes 页数：16 Pages

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丝印：12M1H014；Package：PG-TO247-4-STD-T3.7；CoolSiC??1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology

Features • VDSS = 1200 V at Tvj = 25°C • IDCC = 127 A at Tvj = 25°C • RDS(on) = 14 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Short circuit withstand time 3 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage c

文件：1.34728 Mbytes 页数：17 Pages

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丝印：12M1H020；Package：PG-TO247-4-STD-T3.7；CoolSiC??1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology

Features • VDSS = 1200 V at Tvj = 25°C • IDCC = 98 A at Tvj = 25°C • RDS(on) = 19 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Short circuit withstand time 3 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage ca

文件：1.35923 Mbytes 页数：17 Pages

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丝印：12M1H030；Package：PG-TO247-4-STD-NT3.7；CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 70 A at Tc = 25°C • RDS(on) = 30 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Short circuit withstand time 3 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage can

文件：1.55945 Mbytes 页数：17 Pages

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丝印：12M1H040；Package：PG-TO247-4-STD-T3.7；CoolSiC??1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology

Features • VDSS = 1200 V at Tvj = 25°C • IDCC = 55 A at Tvj = 25°C • RDS(on) = 39 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Short circuit withstand time 3 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage ca

文件：1.34991 Mbytes 页数：17 Pages

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丝印：12M2H012；Package：PG-TO247-4-U07；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 91 A at TC = 100°C • RDS(on) = 12 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasit

文件：1.36609 Mbytes 页数：17 Pages

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丝印：12M2H017；Package：PG-TO247-4-U07；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 69 A at TC = 100°C • RDS(on) = 17 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasit

文件：1.38775 Mbytes 页数：17 Pages

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丝印：12M2H022；Package：PG-TO247-4-U07；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 57 A at TC = 100°C • RDS(on) = 22 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasit

文件：1.37243 Mbytes 页数：17 Pages

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