IMZA120R020M1H中文资料英飞凌数据手册PDF规格书

厂商型号	IMZA120R020M1H
功能描述	CoolSiC??1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology
丝印标识	12M1H020
封装外壳	PG-TO247-4-STD-T3.7
文件大小	1.35923 Mbytes
页面数量	17 页
生产厂商	Infineon Technologies AG
企业简称	INFINEON【英飞凌】
中文名称	英飞凌科技股份公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-26 22:59:00
人工找货	IMZA120R020M1H价格和库存，欢迎联系客服免费人工找货

Features

• VDSS = 1200 V at Tvj = 25°C

• IDCC = 98 A at Tvj = 25°C

• RDS(on) = 19 mΩ at VGS = 18 V, Tvj = 25°C

• Very low switching losses

• Short circuit withstand time 3 μs

• Benchmark gate threshold voltage, VGS(th) = 4.2 V

• Robust against parasitic turn on, 0 V turn-off gate voltage can be applied

• Robust body diode for hard commutation

• .XT interconnection technology for best-in-class thermal performance

Potential applications

• General purpose drives (GPD)

• EV-Charging

• Online UPS/Industrial UP

• String inverters

• Solar power optimizer

Product validation

• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22