NTC Thermistors,Coated

文件：96 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

NTC Thermistors,Coated

文件：96 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

NTC Thermistors, Radial Leaded and Coated

文件：91.48 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

LGA775 socket motherboard for Intel짰 CoreTM processor family

文件：8.08887 Mbytes 页数：96 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

热断路器和热熔断器

Chatham

丝印：12M2H008；Package：PG-TO263-7-HV-ND5.8；CoolSiC™ 1200 V SiC MOSFET G2

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 144 A at TC = 100°C • RDS(on) = 7.7 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against paras

文件：1.22283 Mbytes 页数：17 Pages

INFINEON

英飞凌

丝印：12M2H012；Package：PG-TO263-7-HV-ND5.8；CoolSiC™ 1200 V SiC MOSFET G2

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 102 A at TC = 100°C • RDS(on) = 12.2 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against para

文件：1.30734 Mbytes 页数：17 Pages

INFINEON

英飞凌

丝印：12M2H017；Package：PG-TO263-7-HV-ND5.8；CoolSiC™ 1200 V SiC MOSFET G2

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 76 A at TC = 100°C • RDS(on) = 17.1 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against paras

文件：1.29305 Mbytes 页数：17 Pages

INFINEON

英飞凌

丝印：12M2H022；Package：PG-TO263-7-HV-ND5.8；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 62 A at TC = 100°C • RDS(on) = 21.6 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against paras

文件：1.31598 Mbytes 页数：17 Pages

INFINEON

英飞凌

丝印：12M2H026；Package：PG-TO263-7-HV-ND5.8；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET

Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 53 A at TC = 100°C • RDS(on) = 25.4 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against paras

文件：1.30229 Mbytes 页数：17 Pages

INFINEON

英飞凌