丝印：11N60M2EP；Package：TO-281；N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh™ M2 EP Power MOSFET in an I²PAKFP package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100 avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhan

文件：303.63 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：11N60M2E；Package：PowerFLAT；N-channel 600 V, 0.600 Ω typ., 5.5 A MDmesh™ M2 EP Power MOSFET in a PowerFLAT™ 5x6 HV package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100 avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhan

文件：618.25 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：11N60C3；Package：PG-TO220FP；Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：659.64 Kbytes 页数：16 Pages

INFINEON

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丝印：11N60C3；Package：PG-TO220；Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：659.64 Kbytes 页数：16 Pages

INFINEON

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丝印：11N60C3；Package：PG-TO262；Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：659.64 Kbytes 页数：16 Pages

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丝印：11N60C3；Package：PG-TO220；Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：659.64 Kbytes 页数：16 Pages

INFINEON

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Cool MOS™ Power Transistor

Cool MOS™ Power TransistorFeature\n• New revolutionary high voltage technology\n• Ultra low gate charge\n• Periodic avalanche rated\n• Extreme dv/dt rated\n• High peak current capability\n• Improved transconductance\n• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)\n• Pb-free lea

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11A, 600V N-CHANNEL POWER MOSFET

The UTC 11N60K-MT is an N-channel enhancement modepower MOSFET. It uses UTC advanced planar stripe, DMOStechnology to provide customers perfect switching performance,minimal on-state resistance. It also can withstand high energy pulsein the avalanche and commutation mode.The UTC 11N60K-MT is univers • RDS(ON)<1.00Ω @ VGS=10V\n• Fast Switching\n• With 100% Avalanche Tested;

UTC

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Cool MOS™ Power Transistor

Cool MOS™ Power TransistorFeature\n• New revolutionary high voltage technology\n• Ultra low gate charge\n• Periodic avalanche rated\n• Extreme dv/dt rated\n• Ultra low effective capacitances\n• Improved transconductance

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英飞凌