SPA11N60C3

Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

SPA11N60C3

isc N-Channel MOSFET Transistor

•FEATURES •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

SPA11N60C3

N-Channel 650V (D-S)Power MOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS)

SPA11N60C3

Marking：11N60C3；Package：PG-TO220FP；Cool MOS??Power Transistor Feature New revolutionary high voltage technology

SPA11N60C3

Cool MOS??Power Transistor

SPA11N60C3E8185

N-Channel MOSFET Transistor

•DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.38Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice perfor

SPA11N60C3E8185

Marking：11N60C3；Package：PG-TO220；Cool MOS??Power Transistor Feature New revolutionary high voltage technology