Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：352.75 Kbytes 页数：14 Pages

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英飞凌

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • 150 °C operating temperature

文件：193.21 Kbytes 页数：14 Pages

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英飞凌

丝印：11N60C3；Package：PG-TO262；Cool MOS™ Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)

文件：683.7 Kbytes 页数：15 Pages

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英飞凌

isc N-Channel MOSFET Transistor

• DESCRITION • Ultra low gate charge • High peak current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.38Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perform

文件：331.58 Kbytes 页数：2 Pages

ISC

无锡固电

Cool MOS??Power Transistor

文件：662.11 Kbytes 页数：15 Pages

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英飞凌

丝印：11N60C3；Package：PG-TO262；Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：659.64 Kbytes 页数：16 Pages

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英飞凌

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

600V CoolMOS ™ C3 的替代品是 CoolMOS ™ P7 600V CoolMOS ™ C3 是英飞凌的第三系列 CoolMOS ™ ，于 2001 年进入市场。C3 是该投资组合的“主力”。 • 低导通电阻 (RDS(on)*A)\n• 输出电容中极低的能量存储 (Eoss) @400V\n• 低栅极电荷 (Qg)\n• 经过现场验证的 CoolMOS ™质量\n• CoolMOS ™技术自 1998 年起由英飞凌生产;

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英飞凌