丝印：080N04；Package：PDFN3x3-8L；MOSFET

Features - Super low gate charge. - Advanced high cell density trench technology. - AEC-Q101 Qualified. - Excellent Cdv/dt effect decline. - Green device available.

文件：508.45 Kbytes 页数：6 Pages

COMCHIP

典琦

丝印：080N03LS；Package：TDSON-8；OptiMOS?? Power-MOSFET

Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanc

文件：526.92 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：080N12LS；Package：PG-TDSON-8；OptiMOSTM 3 Power-Transistor, 120 V

Features • N-channel, logic level • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-

文件：1.77702 Mbytes 页数：13 Pages

Infineon

英飞凌

丝印：080IEBE；Package：SOT8074-1；650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

1. General description The GAN080-650EBE is a general purpose 650 V, 80 mΩ Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm surface mount package. It is a normally-off e-mode device offering superior performance. 2. Features and benefits • Enhancement mode - normally-off power switch • Ultra h

文件：320.38 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：080N03L；Package：PG-TO263-3；OptiMOS?? Power-Transistor

Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche rated • Pb-free plating; Ro

文件：280.26 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：080N03L；Package：PG-TO220-3-1；OptiMOS?? Power-Transistor

Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche rated • Pb-free plating; Ro

文件：280.26 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：080N10N6；Package：PG-TDSON-8FL；OptiMOSTM 6 Power-Transistor, 100 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching and synchronous rectification •

文件：1.34179 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：080N1N6；Package：PG-TSDSON-8FL；OptiMOSTM 6 Power-Transistor, 100 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching and synchronous rectification •

文件：1.39135 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：080N03LS；Package：TDSON-8；OptiMOS?? Power-MOSFET

文件：390.65 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：080N03MS；Package：TDSON-8；OptiMOS?? M-Series Power-MOSFET

文件：299.24 Kbytes 页数：10 Pages

Infineon

英飞凌