丝印：080IEBE；Package：SOT8074-1；650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

1. General description The GAN080-650EBE is a general purpose 650 V, 80 mΩ Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm surface mount package. It is a normally-off e-mode device offering superior performance. 2. Features and benefits • Enhancement mode - normally-off power switch • Ultra h

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650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

The GAN080-650EBE is a general purpose 650 V, 80 mΩ Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm surface mount package. It is a normally-off e-mode device offering superior performance. • Enhancement mode - normally-off power switch\n• Ultra high frequency switching capability\n• No body diode\n• Low gate charge, low output charge\n• Qualified for standard applications\n• ESD protection\n• RoHS, Pb-free, REACH-compliant\n• High efficiency and high power density\n• Low package induc;

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