GAN080-650EBE中文资料安世数据手册PDF规格书

1. General description

The GAN080-650EBE is a general purpose 650 V, 80 mΩ Gallium Nitride (GaN) FET in a DFN

8 mm x 8 mm surface mount package. It is a normally-off e-mode device offering superior

performance.

2. Features and benefits

• Enhancement mode - normally-off power switch

• Ultra high frequency switching capability

• No body diode

• Low gate charge, low output charge

• Qualified for standard applications

• ESD protection

• RoHS, Pb-free, REACH-compliant

• High efficiency and high power density

• Low package inductance and low package resistance

3. Applications

• High power density and high efficiency power conversion

• AC-to-DC converters, totem pole PFC

• DC-to-DC converters

• Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers

• Datacom and telecom (AC-to-DC and DC-to-DC) converters

• Motor drives

• Solar (PV) inverters

• Class D audio amplifiers, TV PSU and LED drivers