丝印：068；WE-MCRI SMT Molded Coupled Inductor

General Information: Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：645.24 Kbytes 页数：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：068N20N6；Package：PG-TO263-3；MOSFET OptiMOSTM 6 Power-Transistor, 200 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61

文件：1.15173 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：068N10N；Package：TO-252；100V N-Channel MOSFET

Features • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • 175 °C operating temperature • Ideal for high-frequency switching and synchronous rectification •(VGS = 10V) •VDS (V) =100V •ID =90A •RDS(ON)

文件：590.4 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：068P03L；Package：TO-252；-30V P-Channel MOSFET

Features • Qualified according JEDEC1) for target • 175 °C operating temperature • 100 Avalanche tested • Pb-free; RoHS compliant, halogen free • applications: power management

文件：649.75 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：068P03L；Package：TO-252；P-Channel Enhancement Mode MOSFET

Features © Vos =30V.5 =B0A @ Reso =8ma@Ves=-10v © Ro 11mO@Vos=45V.

文件：2.77524 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：068N20N6；Package：PG-HDSOP-16；MOSFET OptiMOS™ 6 Power‑Transistor, 200 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61

文件：1.24882 Mbytes 页数：15 Pages

Infineon

英飞凌

丝印：068R5ND；Package：TO-252-2L；80A, 60V N-CHANNEL MOSFET

DESCRIPTION SVT068R5NT/D/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. Th

文件：363.41 Kbytes 页数：11 Pages

SILAN

士兰微

丝印：068R5NL5；80A, 60V N-CHANNEL MOSFET

DESCRIPTION SVT068R5NT/D/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. Th

文件：363.41 Kbytes 页数：11 Pages

SILAN

士兰微

丝印：068R5NS；Package：TO-263-2L；80A, 60V N-CHANNEL MOSFET

DESCRIPTION SVT068R5NT/D/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. Th

文件：363.41 Kbytes 页数：11 Pages

SILAN

士兰微

丝印：068R5NT；Package：TO-220-3L；80A, 60V N-CHANNEL MOSFET

DESCRIPTION SVT068R5NT/D/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. Th

文件：363.41 Kbytes 页数：11 Pages

SILAN

士兰微