丝印：001；Package：WSON；DS90LV001 800 Mbps LVDS Buffer

1FEATURES 2• Single +3.3 V Supply • LVDS Receiver Inputs Accept LVPECL Signals • TRI-STATE Outputs • Receiver Input Threshold

文件：1.032369 Mbytes 页数：24 Pages

TI

德州仪器

丝印：001；Package：WSON；DS90LV001 800 Mbps LVDS Buffer

1FEATURES 2• Single +3.3 V Supply • LVDS Receiver Inputs Accept LVPECL Signals • TRI-STATE Outputs • Receiver Input Threshold

文件：1.032369 Mbytes 页数：24 Pages

TI

德州仪器

丝印：001；Package：WSON；DS90LV001 800 Mbps LVDS Buffer

1FEATURES 2• Single +3.3 V Supply • LVDS Receiver Inputs Accept LVPECL Signals • TRI-STATE Outputs • Receiver Input Threshold

文件：1.032369 Mbytes 页数：24 Pages

TI

德州仪器

丝印：001；Package：WSON；DS90LV001 800 Mbps LVDS Buffer

1FEATURES 2• Single +3.3 V Supply • LVDS Receiver Inputs Accept LVPECL Signals • TRI-STATE Outputs • Receiver Input Threshold

文件：1.032369 Mbytes 页数：24 Pages

TI

德州仪器

丝印：001；Package：SOT1408-1；SuperSpeed USB 3.0 redriver

General description PTN36001 is a small, low power SuperSpeed USB 3.0 redriver IC that enhances signal quality by performing receive equalization on the deteriorated input signal followed by transmit de-emphasis maximizing system link performance for mobile applications. With its superior differe

文件：1.03644 Mbytes 页数：31 Pages

恩XP

丝印：001；Package：SSOT；NPN & PNP General-Purpose Amplifier

文件：316.05 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：001001；Package：DFN1010D-3；45 V, 100 mA NPN general-purpose transistors

Features and benefits  General-purpose transistors  Three current gain selections  Low package height of 0.37 mm  Suitable for Automatic Optical Inspection (AOI) of solder joint  AEC-Q101 qualified

文件：1.28054 Mbytes 页数：15 Pages

NEXPERIA

安世

丝印：001011；Package：DFN1010D-3；45 V, 100 mA NPN general-purpose transistors

Features and benefits  General-purpose transistors  Three current gain selections  Low package height of 0.37 mm  Suitable for Automatic Optical Inspection (AOI) of solder joint  AEC-Q101 qualified

文件：1.28054 Mbytes 页数：15 Pages

NEXPERIA

安世

丝印：001010；Package：DFN1010D-3；30 V, 1 A PNP low VCEsat (BISS) transistor

1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement: PBSS4130QA. 2. Features and benefits • Very low collector-

文件：726.66 Kbytes 页数：17 Pages

NEXPERIA

安世

丝印：00100010；Package：SOT883B；PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 2.2 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123EMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■

文件：836.02 Kbytes 页数：13 Pages

NEXPERIA

安世