20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

SUMMARY VCEO=20V; RSAT = 55m ; IC= 3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switchin

文件：230.48 Kbytes 页数：6 Pages

ZETEX

20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Low Equivalent On Res

文件：243.18 Kbytes 页数：6 Pages

DIODES

美台半导体

NPN LOW SATURATION SWITCHING TRANSISTOR

文件：365.63 Kbytes 页数：7 Pages

DIODES

美台半导体

Package：SOT-23-6；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 20V 3.5A SOT23-6

DIODES

美台半导体