DUAL 40V PNP LOW SATURATION SWITCHING TRANSISTOR

Features and Benefits • BVCEO > -40V • IC = -3A Continuous Collector Current • Low Saturation Voltage (-220mV @ -1A) • RSAT = 104 mΩ for Low Equivalent On Resistance • hFE specified up to -3A for high gain holds up • Dual NPN saving footprint and component count • Low profile 0.8mm high pac

文件：192.07 Kbytes 页数：7 Pages

DIODES

美台半导体

40V PNP LOW SATURATION SWITCHING TRANSISTOR

Features and Benefits • BVCEO > -40V • IC = -3A Continuous Collector Current • Low Saturation Voltage (-220mV max @ -1A) • RSAT = 104 mΩ for a low equivalent On-Resistance • hFE specified up to -3A for high current gain hold up • Low profile 0.6mm high package for thin applications • RθJA e

文件：221.68 Kbytes 页数：7 Pages

DIODES

美台半导体

40V PNP LOW SATURATION SWITCHING TRANSISTOR

Features and Benefits • BVCEO > -40V • IC = -3A Continuous Collector Current • Low Saturation Voltage (-220mV max @ -1A) • RSAT = 104 mΩ for a low equivalent On-Resistance • hFE specified up to -3A for high current gain hold up • Low profile 0.6mm high package for thin applications • RθJA e

文件：221.68 Kbytes 页数：7 Pages

DIODES

美台半导体

40V PNP LOW SATURATION TRANSISTOR AND

Features and Benefits PNP Transistor • BVCEO > -40V • IC = -3A Continuous Collector Current • Low Saturation Voltage (-220mV max @ -1A) • RSAT = 104mΩ for a low equivalent On-Resistance • hFE characterized up to -3A for high current gain hold up Schottky Diode • BVR > 40V

文件：269.85 Kbytes 页数：10 Pages

DIODES

美台半导体