40V PNP LOW SATURATION TRANSISTOR AND

Features and Benefits PNP Transistor • BVCEO > -40V • IC = -3A Continuous Collector Current • Low Saturation Voltage (-220mV max @ -1A) • RSAT = 104mΩ for a low equivalent On-Resistance • hFE characterized up to -3A for high current gain hold up Schottky Diode • BVR > 40V

文件：269.85 Kbytes 页数：10 Pages

DIODES

美台半导体

40V PNP LOW SATURATION TRANSISTOR AND

Features and Benefits PNP Transistor • BVCEO > -40V • IC = -3A Continuous Collector Current • Low Saturation Voltage (-220mV max @ -1A) • RSAT = 104mΩ for a low equivalent On-Resistance • hFE characterized up to -3A for high current gain hold up Schottky Diode • BVR > 40V

文件：269.85 Kbytes 页数：10 Pages

DIODES

美台半导体

PNP + Schottky

• PNP Transistor • VCEO = -40V • RSAT = 104m? • IC = -3A • Schottky Diode • VR = 40V • VF = 500mv (@1A) • IC = 1A • IC = -3A Continuous Collector Current • Low Saturation Voltage (-220mV @ -1A) • hFE characterized up to -3A • Low VF, fast switching Schottky • Lead, Halogen, and Antimony Free/RoHS Co;

Diodes

美台半导体

Package：8-WDFN 裸露焊盘；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 40V 3A DFN3020B-8

DIODES

美台半导体