DUAL 12V PNP LOW SATURATION TRANSISTORS

文件：199.01 Kbytes 页数：7 Pages

DIODES

美台半导体

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 阵列 描述：TRANS 2PNP 12V 4A 8DFN

PAM

龙鼎微

12V PNP LOW SATURATION SWITCHING TRANSISTOR

Features and Benefits • BVCEO > -12V • IC = -4A Continuous Collector Current • Low Saturation Voltage (-140mV max @ -1A) • RSAT = 60 mΩ for a low equivalent On-Resistance • hFE specified up to -10A for a high current gain hold up • Low profile 0.6mm high package for thin applications • RθJA

文件：164.12 Kbytes 页数：7 Pages

DIODES

美台半导体

12V PNP LOW SATURATION SWITCHING TRANSISTOR

Features and Benefits • BVCEO > -12V • IC = -4A Continuous Collector Current • Low Saturation Voltage (-140mV max @ -1A) • RSAT = 60 mΩ for a low equivalent On-Resistance • hFE specified up to -10A for a high current gain hold up • Low profile 0.6mm high package for thin applications • RθJA

文件：164.12 Kbytes 页数：7 Pages

DIODES

美台半导体

12V PNP LOW SATURATION TRANSISTOR AND

Features and Benefits PNP Transistor • BVCEO > -12V • IC = -4A Continuous Collector Current • Low Saturation Voltage (-140mV max @ -1A) • RSAT = 65mΩ for a low equivalent On-Resistance • hFE characterized up to -10A for high current gain hold up Schottky Diode • BVR > 40V

文件：270.98 Kbytes 页数：10 Pages

DIODES

美台半导体