UPA2803T1L-E2-AY数据表ic资料供应代理瑞萨-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
UPA2803T1L-E1-AY	文件：373.78 Kbytes Page：9 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The μ PA2803 is N-channel MOSFET designed for DC/DC converter and power management applications of portable equipments. FEATURES • Low on-state resistance RDS(on)1 = 5.8 mΩ MAX. (VGS = 4.5 V, ID = 20 A) RDS(on)2 = 9.5 mΩ MAX. (VGS = 2.5 V, ID = 10 A) • Built-in gate protection d 文件：373.78 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
UPA2803T1L-E2-AY	文件：373.78 Kbytes Page：9 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The μ PA2803 is N-channel MOSFET designed for DC/DC converter and power management applications of portable equipments. FEATURES • Low on-state resistance RDS(on)1 = 5.8 mΩ MAX. (VGS = 4.5 V, ID = 20 A) RDS(on)2 = 9.5 mΩ MAX. (VGS = 2.5 V, ID = 10 A) • Built-in gate protection d 文件：373.78 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
UPA572T-T1B	文件：0 bytes Page：0 Pages	SOT353	RENESAS 瑞萨上传：深圳市正纳电子有限公司	RENESAS
UPA672T	文件：0 bytes Page：0 Pages	SOT363	RENESAS 瑞萨上传：深圳市正纳电子有限公司	RENESAS
UPA810T-T1	文件：0 bytes Page：0 Pages	SOT363	NEC 瑞萨上传：深圳市吉利鑫科技发展有限公司	NEC

更多UPA2803T1L供应商更新时间2026-4-18 14:18:00