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UPA2810

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2810 is P-channel MOSFET designed for DC/DC converter and power management applications of portable equipments. FEATURES • Low on-state resistance RDS(on)1 = 12 mΩ MAX. (VGS = −10 V, ID = −13 A) RDS(on)2 = 23 mΩ MAX. (VGS = −4.5 V, ID = −6.5 A) • Built-in gate protection

文件:359.49 Kbytes 页数:8 Pages

RENESAS

瑞萨

UPA2810T1L-E1-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2810 is P-channel MOSFET designed for DC/DC converter and power management applications of portable equipments. FEATURES • Low on-state resistance RDS(on)1 = 12 mΩ MAX. (VGS = −10 V, ID = −13 A) RDS(on)2 = 23 mΩ MAX. (VGS = −4.5 V, ID = −6.5 A) • Built-in gate protection

文件:359.49 Kbytes 页数:8 Pages

RENESAS

瑞萨

UPA2810T1L-E2-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2810 is P-channel MOSFET designed for DC/DC converter and power management applications of portable equipments. FEATURES • Low on-state resistance RDS(on)1 = 12 mΩ MAX. (VGS = −10 V, ID = −13 A) RDS(on)2 = 23 mΩ MAX. (VGS = −4.5 V, ID = −6.5 A) • Built-in gate protection

文件:359.49 Kbytes 页数:8 Pages

RENESAS

瑞萨

VDA2810CTA

Low voltage, Low power, 짹1 High detect accuracy CMOS Voltage Detector

GENERAL DESCRIPTIONS The VDA series are voltage detectors with low voltage, low power consumption and high accuracy. The accuracy of the detection voltage is detected based on a voltage reference of high accuracy that the temperature coefficient is controlled. The detection voltage is made in

文件:1.30402 Mbytes 页数:18 Pages

ANASEMAnaSem Hong Kong Limited.

安纳森半导体安纳森半导体香港有限公司

VDA2810NTA

Low voltage, Low power, 짹1 High detect accuracy CMOS Voltage Detector

GENERAL DESCRIPTIONS The VDA series are voltage detectors with low voltage, low power consumption and high accuracy. The accuracy of the detection voltage is detected based on a voltage reference of high accuracy that the temperature coefficient is controlled. The detection voltage is made in

文件:1.30402 Mbytes 页数:18 Pages

ANASEMAnaSem Hong Kong Limited.

安纳森半导体安纳森半导体香港有限公司

WCS2810

Hall Effect Base Linear Current Sensor

Features:  Low noise analog signal path  0.5 mΩ internal conductor resistance  Output voltage proportional to AC and DC current  Current Sensing range 0~10A at 5V voltage supply  High Sensitivity 135 mV/A  Wide operating voltage range 3.0~12 V  Low operating current 3mA  Nearly zer

文件:714.88 Kbytes 页数:5 Pages

DIWELL

详细参数

  • 型号:

    UPA2810

  • 功能描述:

    MOSFET P-CH 30V MINI 8-HVSON

  • RoHS:

  • 类别:

    分离式半导体产品 >> FET - 单

  • 系列:

    -

  • 标准包装:

    1,000

  • 系列:

    MESH OVERLAY™ FET

  • 型:

    MOSFET N 通道,金属氧化物 FET

  • 特点:

    逻辑电平门

  • 漏极至源极电压(Vdss):

    200V 电流 - 连续漏极(Id) @ 25°

  • C:

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C:

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大):

    4V @ 250µA 闸电荷(Qg) @

  • Vgs:

    72nC @ 10V 输入电容(Ciss) @

  • Vds:

    1560pF @ 25V 功率 -

  • 最大:

    40W

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3 整包

  • 供应商设备封装:

    TO-220FP

  • 包装:

    管件

供应商型号品牌批号封装库存备注价格
RENESAS/瑞萨
19+
QFN8
8650
原装正品,现货热卖
询价
NEC
20+
QFN8
11520
特价全新原装公司现货
询价
RENESAS
25+
QFN
30000
代理全新原装现货,价格优势
询价
RENESAS/瑞萨
2447
DFN
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
RENESAS/瑞萨
25+
QFN8
66000
就找我吧!--邀您体验愉快问购元件!
询价
NEC
21+
QFN8
10000
全新原装 公司现货 价格优
询价
RENESAS/瑞萨
23+
QFN
4600
原装正品假一罚百!可开增票!
询价
RENESAS/瑞萨
23+
QFN8
50000
全新原装正品现货,支持订货
询价
RENESAS
25+
SON
15000
原厂原装,价格优势
询价
RENESAS/瑞萨
23+
QFN8
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
更多UPA2810供应商 更新时间2022-6-12 10:12:00