MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2726UT1A is N-channel MOSFET designed for DC/DC converter applications. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 11.0 mΩ MAX. (VGS = 4.5 V, ID = 10 A) • Low input capacitance Ciss = 1720 pF TYP. (VDS = 15 V, VGS = 0 V)

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P-Channel 30-V (D-S) MOSFET

文件：1.0902 Mbytes 页数：8 Pages

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2726UT1A is N-channel MOSFET designed for DC/DC converter applications. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 11.0 mΩ MAX. (VGS = 4.5 V, ID = 10 A) • Low input capacitance Ciss = 1720 pF TYP. (VDS = 15 V, VGS = 0 V)

文件：352.72 Kbytes 页数：8 Pages

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瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2726UT1A is N-channel MOSFET designed for DC/DC converter applications. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 11.0 mΩ MAX. (VGS = 4.5 V, ID = 10 A) • Low input capacitance Ciss = 1720 pF TYP. (VDS = 15 V, VGS = 0 V)

文件：352.72 Kbytes 页数：8 Pages

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瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2726UT1A is N-channel MOSFET designed for DC/DC converter applications. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 11.0 mΩ MAX. (VGS = 4.5 V, ID = 10 A) • Low input capacitance Ciss = 1720 pF TYP. (VDS = 15 V, VGS = 0 V)

文件：352.72 Kbytes 页数：8 Pages

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瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2726UT1A is N-channel MOSFET designed for DC/DC converter applications. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 11.0 mΩ MAX. (VGS = 4.5 V, ID = 10 A) • Low input capacitance Ciss = 1720 pF TYP. (VDS = 15 V, VGS = 0 V)

文件：352.72 Kbytes 页数：8 Pages

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瑞萨