MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2731T1A is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-state resistance RDS(on)1 = 3.3 mΩ MAX. (VGS = −10 V, ID = −22 A) RDS(on)2 = 6.4 mΩ MAX. (VGS = −4.5

文件：350.17 Kbytes 页数：8 Pages

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2731T1A is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-state resistance RDS(on)1 = 3.3 mΩ MAX. (VGS = −10 V, ID = −22 A) RDS(on)2 = 6.4 mΩ MAX. (VGS = −4.5

文件：350.17 Kbytes 页数：8 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2731T1A is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-state resistance RDS(on)1 = 3.3 mΩ MAX. (VGS = −10 V, ID = −22 A) RDS(on)2 = 6.4 mΩ MAX. (VGS = −4.5

文件：350.17 Kbytes 页数：8 Pages

RENESAS

瑞萨

SOP8

RENESAS

瑞萨

上传：深圳市正纳电子有限公司

SOP8

RENESAS

瑞萨

上传：深圳市正纳电子有限公司