MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2719AGR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Lithium-Ion battery protection circuit. FEATURES • Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = −10 V, ID = −5.0 A) RDS(on)2 = 20.9 mΩ MAX. (VGS

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RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2719GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = −10 V, ID = −5.0 A) RDS(on)2 = 20.9 mΩ MAX. (VGS = −4.5

文件：358.32 Kbytes 页数：9 Pages

RENESAS

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SWITCHING P-CHANNEL POWER MOSFET

文件：140.69 Kbytes 页数：7 Pages

NEC

瑞萨

Charger Controller with Fuel-Guage & LCD/LED Display

文件：604.04 Kbytes 页数：26 Pages

PERICOMPericom Semiconductor Corporation

百利通百利通半导体

Precision improvement techniques

文件：242.78 Kbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

Photosensor amplifier

Current-to-voltage conversion amplifier for amplifying weak photocurrent with low noise C2719 is a current-to-voltage conversion amplifier used to amplify weak photocurrent from a photodiode with very low noise. Three ranges of photocurrent detection sensitivity level (H, M, L) are selectable

文件：477.24 Kbytes 页数：6 Pages

HAMAMATSUHamamatsu Photonics Co.,Ltd.

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