UPA1710A

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES ·Lowon-resistance RDS(on)1=70mW(MAX.)(VGS=–10V,ID=–2.5A) RDS(on)2=160mW(MAX.)(VGS=–4V,ID=–2.0A) ·LowCiss:Ciss=840pF(TYP.) ·Built-inG-Sprotectiondiode ·Smallandsurfacemountpackage(Power

UPA1710AG

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES ·Lowon-resistance RDS(on)1=70mW(MAX.)(VGS=–10V,ID=–2.5A) RDS(on)2=160mW(MAX.)(VGS=–4V,ID=–2.0A) ·LowCiss:Ciss=840pF(TYP.) ·Built-inG-Sprotectiondiode ·Smallandsurfacemountpackage(Power

1710

CAPTIVEPANELSCREWS

1710

3M??Novec??1710ElectronicGradeCoating

1710

PinSensForceSensorformoldcavitypressurewithdiameter12,6mm

•Replaceablecable •Availablewithsingle-wiretechnology

1710

MiniatureForceSensorforMoldCavityPressurewithdiameter6mmandM2,5thread

•CasewithM2,5mountingthread •Replaceablecable •Availablewithsinglewiretechnology

1710

CustomerSpecification

Construction Diameters(In) 1)Component12X1COND a)Conductor22(19/34)AWGTinnedCopper0.032 b)Insulation0.025Wall,Nom.Polyethylene(PE)0.082 (1)Color(s) CondColorCondColorCondColor 1WHITE2BLACK 2)CableAssembly2ComponentsCabled a)Twists:5.3Twists/foot(min)

1710A

SingleOutputDCPowerSupplies

ACE1710B

N-ChannelEnhancementModeMOSFET

ADLSEC-1710

Edge-ConnectArchitecture