MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE FEATURES · Low on-resistance RDS(on)1 = 70 mW (MAX.) (VGS = –10 V, ID = –2.5 A) RDS(on)2 = 160 mW (MAX.) (VGS = –4 V, ID = –2.0 A) · Low Ciss : Ciss = 840 pF (TYP.) · Built-in G-S protection diode · Small and surface mount package (Power

文件：244.63 Kbytes 页数：10 Pages

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MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE FEATURES · Low on-resistance RDS(on)1 = 70 mW (MAX.) (VGS = –10 V, ID = –2.5 A) RDS(on)2 = 160 mW (MAX.) (VGS = –4 V, ID = –2.0 A) · Low Ciss : Ciss = 840 pF (TYP.) · Built-in G-S protection diode · Small and surface mount package (Power

文件：244.63 Kbytes 页数：10 Pages

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Low voltage, Low power, 짹1 High detect accuracy CMOS Voltage Detector

GENERAL DESCRIPTIONS The VDA series are voltage detectors with low voltage, low power consumption and high accuracy. The accuracy of the detection voltage is detected based on a voltage reference of high accuracy that the temperature coefficient is controlled. The detection voltage is made in

文件：1.30402 Mbytes 页数：18 Pages

ANASEMAnaSem Hong Kong Limited.

安纳森半导体安纳森半导体香港有限公司

Low voltage, Low power, 짹1 High detect accuracy CMOS Voltage Detector

GENERAL DESCRIPTIONS The VDA series are voltage detectors with low voltage, low power consumption and high accuracy. The accuracy of the detection voltage is detected based on a voltage reference of high accuracy that the temperature coefficient is controlled. The detection voltage is made in

文件：1.30402 Mbytes 页数：18 Pages

ANASEMAnaSem Hong Kong Limited.

安纳森半导体安纳森半导体香港有限公司

Voltage Quality Recorder

文件：305.85 Kbytes 页数：2 Pages

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