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TPCC8003-H

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPCF8003

notebookPCApplicationsPortableEquipmentApplications

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPCF8003

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPCP8003-H

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPCP8003-H

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(UltraHighspeedU-MOSIII)

HighEfficiencyDC/DCConverterApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetoasmallandthinpackage •Highspeedswitching •Smallgatecharge:QSW=7.5nC(typ.) •Lowdrain-sourceON-resistance:RDS(ON)=130mΩ(typ.) •Highforward

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

UP8003

Multiple-InputLi-ionBatteryCharger

UPI

uPI Semiconductor Corp

UP8003AQAG

Multiple-InputLi-ionBatteryCharger

UPI

uPI Semiconductor Corp

VOI-8003

4FXSand4FXOH323/SIPGateway

LVL1

Level One

WD8003FRYZ

WDGold™Enterprise-classHardDrives

Highworkloadrating Deliveringdependable performancetoanystorage environment,WDGold™hard drivesaredesignedwitha workloadratingupto550TBper year1,amongthehighestofany 3.5-inchharddrive. Enterprise-classstoragetorelyon Withupto2.5millionhoursMTBF, WDGold

Western

Western Digital Corporation or its affiliates.

详细参数

  • 型号:

    TPCC8003-H

  • 功能描述:

    MOSFET MOSFET 30V 17A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
TOSHIBA/东芝
20+
DFN3.3X3.3
120000
原装正品 可含税交易
询价
TOSHIBA
11+
MLP-8
8000
全新原装,绝对正品现货供应
询价
TOSHIBA
23+
MLP-8
5000
原装正品,假一罚十
询价
TOSHIBA
14+PBF
DFN3X3
84000
现货
询价
TOSHIBA
23+
QFN
50000
全新原装正品现货,支持订货
询价
TOSHIBA/东芝
23+
8-TSON3.3X3.3
50000
全新原装正品现货,支持订货
询价
TOSHIBA
22+
MLP-8
3000
原装正品,支持实单
询价
TOSHIBA/东芝
14+
DFN3X3
50000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
TOSHIBA/东芝
24+
NA/
12224
原装现货,当天可交货,原型号开票
询价
TOSHIBA/东芝
2022+
DFN3X3
30000
进口原装现货供应,原装 假一罚十
询价
更多TPCC8003-H供应商 更新时间2025-7-25 14:00:00