TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 8 S (typ.) • Low leakage current: IDSS = 10 μA (max.) (VDS = 30 V) • Enhancement mode: Vth = 1.3 to 2.5 V

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)

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High Speed and High Efficiency DC-DC Converters, Notebook PC Applications, Portable Equipment Applications

High-Efficiency DC／ DC Converter Applications Notebook PC Applications Portable-Equipment Applications • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 6.0 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 7 mΩ (typ.) • High forward tr

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)

High Efficiency DC／ DC Converter Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • High speed switching • Small gate charge: QSW = 3.6 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 13 mΩ (typ.) • High forward t

文件：249.24 Kbytes 页数：7 Pages

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