Field Effect Transistor Silicon N-Channel MOS Type (U-MOS??

Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 4.5 mΩ (typ.) ( VGS = 10 V) • Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) • Enhancement mode: Vth

文件：223.7 Kbytes 页数：7 Pages

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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Power MOSFET (N-ch single VDSS 30V)

Application Scope：Mobile equipments / Notebook PCs\nPolarity：N-ch\nGeneration：U-MOSⅣ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID 25 A \nPower Dissipation PD 30 W \nDrain-Source voltage VDSS 30 V ;

Toshiba

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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High-Speed Switching Applications Switching Regulator Applications DC/DC Converter Applications

文件：215.21 Kbytes 页数：7 Pages

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High-Speed Switching Applications Switching Regulator Applications DC-DC Converter Applications

文件：228.16 Kbytes 页数：7 Pages

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