TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode

High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • Built-in a schottky barrier diode Low forward voltage: VDSF = −0.6 V (max) • High-speed switching • Small gate charge: QSW = 13.4 nC (typ.) • Low drain-source ON-resistance: RDS (ON) =

文件：201.16 Kbytes 页数：8 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

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N-Channel 30 V (D-S) MOSFET

文件：1.11174 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

Power MOSFET (N-ch single VDSS 30V)

Application Scope：Mobile equipments / Notebook PCs\nPolarity：N-ch + SBD\nGeneration：U-MOSⅤ-H\nRoHS Compatible Product(s) (#)：Available Drain current ID 44 A \nPower Dissipation PD 45 W \nDrain-Source voltage VDSS 30 V ;

Toshiba

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