Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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东芝

High-Side Switching Applications

文件：239.56 Kbytes 页数：7 Pages

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Power MOSFET (P-ch single)

Polarity：P-ch\nGeneration：U-MOSⅢ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID -40 A \nPower Dissipation PD 2.8 W \nDrain-Source voltage VDSS -60 V ;

Toshiba

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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Lithium-Ion Secondary Batteries Power Management Switches

文件：237.44 Kbytes 页数：9 Pages

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TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE(U-MOS4)

Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.6 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1mA

文件：75.21 Kbytes 页数：3 Pages

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东芝