Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Silicon P Channel MOS Type (U-MOS??

文件：238.62 Kbytes 页数：7 Pages

TOSHIBA

东芝

Power MOSFET (P-ch single)

Application Scope：Lithium-Ion secondary batteries / Power management switches\nPolarity：P-ch\nGeneration：U-MOSⅥ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID -24 A \nPower Dissipation PD 30 W \nDrain-Source voltage VDSS -30 V \nGate-Source voltage VGSS -25/+20 V ;

Toshiba

东芝

3 V, SILICON MMIC FREQUENCY UP-CONVERTER

DESCRIPTION The UPC8106T and UPC8109T are L-Band Frequency UpConverters manufactured using the NESAT III MMIC process. The UPC8106T was designed for low distortion while the UPC8109T was designed for low current consumption. Operation from a 3 volt supply voltage makes this device ideal for handh

文件：112.58 Kbytes 页数：4 Pages

NEC

瑞萨

SILICON RFIC HI-IP3 FREQUENCY UP-CONVERTER FOR WIRELESS TRANSCEIVER

文件：121.05 Kbytes 页数：8 Pages

NEC

瑞萨

SILICON MMIC 2.0 GHz FREQUENCY UP-CONVERTER FOR CELLULAR TELEPHONE

DESCRIPTION The µPC8163TB is a silicon monolithic integrated circuit designed as frequency up-converter for cellular telephone transmitter stage. The µPC8163TB has improved intermodulation performance and smaller package. The µPC8163TB is manufactured using NEC’s 20 GHz fT NESATTMlll silicon bip

文件：133.76 Kbytes 页数：16 Pages

NEC

瑞萨