TK3R3A06PL

isc N-Channel MOSFET Transistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=2.5mΩ(typ.)(VGS=10V) •Enhancementmode: Vth=1.5to2.5V(VDS=10V,ID=0.7mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandrelia

TK3R3A06PL

High-Efficiency DC-DC Converters

Features (1)High-speedswitching (2)Smallgatecharge:QSW=21nC(typ.) (3)Smalloutputcharge:Qoss=66nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.5mΩ(typ.)(VGS=10V) (5)Lowleakagecurrent:IDSS=10µA(max)(VDS=60V) (6)Enhancementmode:Vth=1.5to2.5V

TK3R9E10PL

High-Efficiency DC-DC Converters

Features (1)High-speedswitching (2)Smallgatecharge:QSW=26nC(typ.) (3)Smalloutputcharge:Qoss=99nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=3.3mΩ(typ.)(VGS=10V) (5)Lowleakagecurrent:IDSS=10µA(max)(VDS=100V) (6)Enhancementmode:Vth=1.5to2.5V

TK3R9E10PL

Marking：K3R9E10PL；Package：TO-220；MOSFETs Silicon N-channel MOS

1.Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers 2.Features (1)High-speedswitching (2)Smallgatecharge:QSW=26nC(typ.) (3)Smalloutputcharge:Qoss=99nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=3.3mΩ(typ.)(VGS=

TK3R9E10PL_V01

MOSFETs Silicon N-channel MOS

1.Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers 2.Features (1)High-speedswitching (2)Smallgatecharge:QSW=26nC(typ.) (3)Smalloutputcharge:Qoss=99nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=3.3mΩ(typ.)(VGS=

TK30

Electrical/HVAC MultiMeter Test Kits

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Topstek Current Transducer

TK30A06J3

N-Channel 60 V (D-S) MOSFET

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N-Channel 60 V (D-S) MOSFET

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Isc N-Channel MOSFET Transistor