Field Effect Transistor Silicon N Channel MOS Type

Switching Regulator Applications ● Low drain-source ON-resistance: RDS (ON) = 19 mΩ (typ.) ● High forward transfer admittance: |Yfs| = 34 S (typ.) ● Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) ● Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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Switching Voltage Regulators

MOSFETs Silicon N-channel MOS (U-MOS-H) Features (1) Low drain-source on-resistance: RDS(ON)= 12.2 mΩ(typ.) (VGS= 10 V) (2) Low leakage current: IDSS= 10 µA (max) (VDS= 60 V) (3) Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 0.2 mA) Applications • Switching Voltage Regulators

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Switching Voltage Regulators

Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA) Applications • Switching Voltage Regulators

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丝印：TK31E60X；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.5 mA)

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丝印：K31J60W5；Package：TO-3P；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.082 Ω (typ.) by using Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3.0 to 4.5 V (VDS

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丝印：K31N60W5；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.082 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS

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丝印：K31N60X；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.5 mA)

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丝印：TK31V60W；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.078 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA)

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丝印：TK31V60W5；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.087 Ω(typ.) (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1.5 mA)

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