TK3

包装：散装 类别：盒子，外壳，机架 卡机架配件 描述：TERMINAL KIT P184 10EA T49

TK3

包装：散装 类别：盒子，外壳，机架 卡机架配件 描述：TERMINAL KIT P184 10EA T49

TK30A06J3A

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TK30A06J3A

Field Effect Transistor Silicon N Channel MOS Type

SwitchingRegulatorApplications ●Lowdrain-sourceON-resistance:RDS(ON)=19mΩ(typ.) ●Highforwardtransferadmittance:|Yfs|=34S(typ.) ●Lowleakagecurrent:IDSS=10μA(max)(VDS=60V) ●Enhancementmode:Vth=1.3to2.5V(VDS=10V,ID=1mA)

TK30A06N1

Switching Voltage Regulators

MOSFETsSiliconN-channelMOS(U-MOS-H) Features (1)Lowdrain-sourceon-resistance:RDS(ON)=12.2mΩ(typ.)(VGS=10V) (2)Lowleakagecurrent:IDSS=10µA(max)(VDS=60V) (3)Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=0.2mA) Applications •SwitchingVoltageRegulators

TK31A60W

Switching Voltage Regulators

Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.073Ω(typ.)byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=1.5mA) Applications •SwitchingVoltageRegulators

TK31E60X

Marking：TK31E60X；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.073Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=1.5mA)

TK31J60W5

Marking：K31J60W5；Package：TO-3P；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=135ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.082Ω(typ.) byusingSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3.0to4.5V(VDS

TK31N60W5

Marking：K31N60W5；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=135ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.082Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3to4.5V(VDS

TK31N60X

Marking：K31N60X；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.073Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=1.5mA)