Switching Voltage Regulators

MOSFETs Silicon N-channel MOS (U-MOS-H) Features (1) Low drain-source on-resistance: RDS(ON)= 12.2 mΩ(typ.) (VGS= 10 V) (2) Low leakage current: IDSS= 10 µA (max) (VDS= 60 V) (3) Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 0.2 mA) Applications • Switching Voltage Regulators

文件：242.36 Kbytes 页数：9 Pages

TOSHIBA

东芝

Isc N-Channel MOSFET Transistor

文件：342.96 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET (N-ch single 30V VDSS 60V)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅧ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain current ID 43 A \nPower Dissipation PD 25 W \nDrain-Source voltage VDSS 60 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝

Isc N-Channel MOSFET Transistor

文件：342.96 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 60-V (D-S) MOSFET

文件：926.38 Kbytes 页数：7 Pages

VBSEMI

微碧半导体