丝印：TK31V60X；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.078 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.5 mA)

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丝印：K31Z60X；Package：TO-247-4L；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.5 mA)

文件：275.54 Kbytes 页数：10 Pages

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MOSFETs Silicon N-channel MOS (U-MOS??H)

1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 8.2 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 1.5 to 2.5 V (VDS

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MOSFETs Silicon N-channel MOS (U-MOS-H)

1. Applications • Automotive • Switching Voltage Regulators • Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 8.2 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 33A@ TC= 25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 9.7mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive · Switching Voltage Regulators

文件：277.46 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：K35A65W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.068 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 2.1 mA)

文件：232.23 Kbytes 页数：10 Pages

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丝印：K35A65W5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 130 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.08 Ω (typ.) by using Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 1

文件：234.81 Kbytes 页数：10 Pages

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丝印：K35N65W；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.068 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 2.1 mA)

文件：241.14 Kbytes 页数：10 Pages

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丝印：K35N65W5；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 130 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.08 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS =

文件：243.77 Kbytes 页数：10 Pages

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Phase Control Thyristor

FEATURES ■ High Surge Capability APPLICATIONS ■ High Power Drives ■ High Voltage Power Supplies ■ DC Motor Control ■ Welding ■ Battery Chargers

文件：177.82 Kbytes 页数：8 Pages

DYNEX