MOSFETs Silicon N-channel MOS (U-MOS??H)

1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 8.2 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 1.5 to 2.5 V (VDS

文件：447.84 Kbytes 页数：9 Pages

TOSHIBA

东芝

Power MOSFET (N-ch single 60V VDSS 150V)

Application Scope：Motor drivers / Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅧ-H\nAEC-Q101：Conform\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID 33 A \nPower Dissipation PD 125 W \nDrain-Source voltage VDSS 100 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 33A@ TC= 25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 9.7mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive · Switching Voltage Regulators

文件：277.46 Kbytes 页数：2 Pages

ISC

无锡固电

MOSFETs Silicon N-channel MOS (U-MOS-H)

1. Applications • Automotive • Switching Voltage Regulators • Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 8.2 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS

文件：281.32 Kbytes 页数：9 Pages

TOSHIBA

东芝

N-Channel 100-V (D-S) MOSFET

文件：1.02046 Mbytes 页数：8 Pages

VBSEMI

微碧半导体