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型号	下载订购	功能描述	制造商上传企业	LOGO
TK3R1P04PL	文件：465.82 Kbytes Page：9 Pages	High-Efficiency DC-DC Conve Features (1) High-speed switching (2) Small gate charge: QSW = 19 nC (typ.) (3) Small output charge: Qoss = 42 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (6) Enhancement mode: Vth = 1.4 to 2.4 V 文件：465.82 Kbytes 页数：9 Pages	TOSHIBA 东芝	TOSHIBA
TK3R1P04PL	文件：501.63 Kbytes Page：9 Pages	丝印：TK3R1P04PL；Package：DPAK；MOSFETs Silicon N-channel MOS 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 19 nC (typ.) (3) Small output charge: Qoss = 42 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 文件：501.63 Kbytes 页数：9 Pages	TOSHIBA 东芝	TOSHIBA
TK3R1P04PL	文件：333.59 Kbytes Page：2 Pages	丝印：DPAK；Package：TO-252；iscN-Channel MOSFET Transistor • DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) = 3.1mΩ (MAX) (VGS = 10 V) • Enhancement mode: Vth = 1.4 to 2.4V (VDS = 10 V, ID=0.5mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliab 文件：333.59 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
TK3R1P04PL_V01	文件：501.63 Kbytes Page：9 Pages	MOSFETs Silicon N-channel MOS 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 19 nC (typ.) (3) Small output charge: Qoss = 42 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 文件：501.63 Kbytes 页数：9 Pages	TOSHIBA 东芝	TOSHIBA
TK3R2A10PL	文件：728.52 Kbytes Page：9 Pages	High-Efficiency DC-DC Converters Features (1) High-speed switching (2) Small gate charge: QSW = 48 nC (typ.) (3) Small output charge: Qoss = 164 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (6) Enhancement mode: Vth = 1.5 to 2.5 文件：728.52 Kbytes 页数：9 Pages	TOSHIBA 东芝	TOSHIBA
TK3R2A10PL	文件：626.49 Kbytes Page：9 Pages	丝印：K3R2A10PL；Package：TO-220SIS；MOSFETs Silicon N-channel MOS 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 48 nC (typ.) (3) Small output charge: Qoss = 164 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS 文件：626.49 Kbytes 页数：9 Pages	TOSHIBA 东芝	TOSHIBA
TK3R2A10PL_V01	文件：626.49 Kbytes Page：9 Pages	MOSFETs Silicon N-channel MOS 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 48 nC (typ.) (3) Small output charge: Qoss = 164 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS 文件：626.49 Kbytes 页数：9 Pages	TOSHIBA 东芝	TOSHIBA
TK3R2E06PL	文件：471.28 Kbytes Page：9 Pages	High-Efficiency DC-DC Converters Features (1) High-speed switching (2) Small gate charge: QSW = 21 nC (typ.) (3) Small output charge: Qoss = 66 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.4 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V 文件：471.28 Kbytes 页数：9 Pages	TOSHIBA 东芝	TOSHIBA
TK3R2E06PL	文件：372.93 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=100A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =3.2Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：372.93 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
TK3R3A06PL	文件：289.19 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor • DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) = 2.5mΩ (typ.) (VGS = 10 V) • Enhancement mode: Vth = 1.5 to 2.5V (VDS = 10 V, ID=0.7mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and relia 文件：289.19 Kbytes 页数：2 Pages	ISC 无锡固电	ISC

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技术参数

Polarity：
N-ch
VDSS(V)：
600
VGSS(V)：
+/-30
ID(A)：
2.5
PD(W)：
30
Ciss(pF)：
380
Qg(nC)：
9.0
=10V：
2.8
Number of pins：
3
Surface mount package：
N
Package name(Toshiba)：
TO-220SIS
Generation：
π-MOSⅦ
Width×Length×Height(mm)：
10.0 x 15.0 x 4.5
Package Size(mm^2)：
150.00
Drive voltage type：
10V Gate Drive

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	TK3A60DA	TOSHIBA/东芝	25+	TO-220F	45000	TOSHIBA/东芝全新现货TK3A60DA即刻询购立享优惠#长期有排单订	询价
深圳市勤思达科技有限公司	TK3A60DA	TOSHIBA	11+	TO-220F	8000	全新原装,绝对正品现货供应	询价
深圳市华来深电子有限公司	TK3A60DA	TOSHIBA	23+	TO-220F	8560	受权代理!全新原装现货特价热卖!	询价
深圳市华斯顿科技有限公司	TK3A60DA	TOSHIBA	25+23+	TO-220F	15953	绝对原装正品全新进口深圳现货	询价
深圳市拓亿芯电子有限公司	TK3A60DA	TOSHIBA	25+	TO-220F	30000	代理全新原装现货,价格优势	询价
艾睿（深圳）半导体有限公司	TK3A60DA	TOSHIBA/东芝	2447	TO-220F	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市安富世纪电子有限公司	TK3A60DA	TOSHIBA	23+	TO-220属封	50000	全新原装正品现货,支持订货	询价
深圳市威尔健半导体有限公司	TK3A60DA	TOSHIBA/东芝	23+	TO-220F	50000	全新原装正品现货,支持订货	询价
深圳市河锋鑫科技有限公司	TK3A60DA	TOSHIBA/东芝	2022+	TO-220F	32500	原厂代理终端免费提供样品	询价
深圳市威雅利发展有限公司	TK3A60DA	TOSHIBA	13+	TO-220F	145	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价

更多TK3供应商更新时间2026-1-26 14:14:00

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