TK3R1E04PL

iscN-Channel MOSFET Transistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=3.1mΩ(MAX)(VGS=10V) •Enhancementmode: Vth=1.4to2.4V(VDS=10V,ID=0.5mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliab

TK3R1P04PL

High-Efficiency DC-DC Conve

Features (1)High-speedswitching (2)Smallgatecharge:QSW=19nC(typ.) (3)Smalloutputcharge:Qoss=42nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.5mΩ(typ.)(VGS=10V) (5)Lowleakagecurrent:IDSS=10µA(max)(VDS=40V) (6)Enhancementmode:Vth=1.4to2.4V

TK3R1P04PL

Marking：DPAK；Package：TO-252；iscN-Channel MOSFET Transistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=3.1mΩ(MAX)(VGS=10V) •Enhancementmode: Vth=1.4to2.4V(VDS=10V,ID=0.5mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliab

TK3R1P04PL

Marking：TK3R1P04PL；Package：DPAK；MOSFETs Silicon N-channel MOS

1.Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers 2.Features (1)High-speedswitching (2)Smallgatecharge:QSW=19nC(typ.) (3)Smalloutputcharge:Qoss=42nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.5mΩ(typ.)(VGS=

TK3R1P04PL_V01

MOSFETs Silicon N-channel MOS

1.Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers 2.Features (1)High-speedswitching (2)Smallgatecharge:QSW=19nC(typ.) (3)Smalloutputcharge:Qoss=42nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.5mΩ(typ.)(VGS=

TK3R2A10PL

High-Efficiency DC-DC Converters

Features (1)High-speedswitching (2)Smallgatecharge:QSW=48nC(typ.) (3)Smalloutputcharge:Qoss=164nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.6mΩ(typ.)(VGS=10V) (5)Lowleakagecurrent:IDSS=10µA(max)(VDS=100V) (6)Enhancementmode:Vth=1.5to2.5

TK3R2A10PL

Marking：K3R2A10PL；Package：TO-220SIS；MOSFETs Silicon N-channel MOS

1.Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers 2.Features (1)High-speedswitching (2)Smallgatecharge:QSW=48nC(typ.) (3)Smalloutputcharge:Qoss=164nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.6mΩ(typ.)(VGS

TK3R2A10PL_V01

MOSFETs Silicon N-channel MOS

1.Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers 2.Features (1)High-speedswitching (2)Smallgatecharge:QSW=48nC(typ.) (3)Smalloutputcharge:Qoss=164nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.6mΩ(typ.)(VGS

TK3R2E06PL

High-Efficiency DC-DC Converters

Features (1)High-speedswitching (2)Smallgatecharge:QSW=21nC(typ.) (3)Smalloutputcharge:Qoss=66nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.4mΩ(typ.)(VGS=10V) (5)Lowleakagecurrent:IDSS=10µA(max)(VDS=60V) (6)Enhancementmode:Vth=1.5to2.5V

TK3R2E06PL

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.2Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.