Switching Voltage Regulators

Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA) Applications • Switching Voltage Regulators

文件：256.089 Kbytes 页数：10 Pages

TOSHIBA

东芝

Isc N-Channel MOSFET Transistor

文件：343.68 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET (N-ch 500V VDSS 700V)

Polarity：N-ch\nGeneration：DTMOSⅣ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 30.8 A \nPower Dissipation PD 45 W \nDrain-Source voltage VDSS 600 V \nGate-Source voltage VGSS +/-30 V ;

Toshiba

东芝

Isc N-Channel MOSFET Transistor

文件：343.68 Kbytes 页数：2 Pages

ISC

无锡固电

Switching Voltage Regulators

Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA) Applications • Switching Voltage Regulators

文件：256.089 Kbytes 页数：10 Pages

TOSHIBA

东芝