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TK30A

Topstek Current Transducer

文件:110.32 Kbytes 页数:3 Pages

TOPSTEK

TK30A06J3A

Field Effect Transistor Silicon N Channel MOS Type

Switching Regulator Applications ● Low drain-source ON-resistance: RDS (ON) = 19 mΩ (typ.) ● High forward transfer admittance: |Yfs| = 34 S (typ.) ● Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) ● Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)

文件:658.1 Kbytes 页数:6 Pages

TOSHIBA

东芝

TK30A06J3A

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件:1.58274 Mbytes 页数:73 Pages

TOSHIBA

东芝

TK30A06N1

Switching Voltage Regulators

MOSFETs Silicon N-channel MOS (U-MOS-H) Features (1) Low drain-source on-resistance: RDS(ON)= 12.2 mΩ(typ.) (VGS= 10 V) (2) Low leakage current: IDSS= 10 µA (max) (VDS= 60 V) (3) Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 0.2 mA) Applications • Switching Voltage Regulators

文件:242.36 Kbytes 页数:9 Pages

TOSHIBA

东芝

TK30A06J3

N-Channel 60 V (D-S) MOSFET

文件:2.13845 Mbytes 页数:8 Pages

VBSEMI

微碧半导体

TK30A06J3A

N-Channel 60 V (D-S) MOSFET

文件:2.14023 Mbytes 页数:8 Pages

VBSEMI

微碧半导体

TK30A06N1

Isc N-Channel MOSFET Transistor

文件:342.96 Kbytes 页数:2 Pages

ISC

无锡固电

TK30A06J3

Power MOSFET (N-ch single 30V VDSS 60V)

Polarity:N-ch\nGeneration:U-MOSⅢ\nRoHS Compatible Product(s) (#):Available Drain current ID 30 A \nPower Dissipation PD 30 W \nDrain-Source voltage VDSS 60 V ;

Toshiba

东芝

TK30A06J3A

Power MOSFET (N-ch single 30V VDSS 60V)

Polarity:N-ch\nGeneration:U-MOSⅢ\nRoHS Compatible Product(s) (#):Available\nAssembly bases:马来西亚\n Drain current ID 30 A \nPower Dissipation PD 25 W \nDrain-Source voltage VDSS 60 V \n;

Toshiba

东芝

TK30A06N1

Power MOSFET (N-ch single 30V VDSS 60V)

Application Scope:Switching regulators\nPolarity:N-ch\nGeneration:U-MOSⅧ-H\nRoHS Compatible Product(s) (#):Available\nAssembly bases:中国 Drain current ID 43 A \nPower Dissipation PD 25 W \nDrain-Source voltage VDSS 60 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝

技术参数

  • Product Category:

    Power MOSFET (N-ch single 30V<VDSS≦60V)

  • Package name(Toshiba):

    TO-220SIS

  • Recommended Product 1:

    TK30A06N1(Almost same package but similar characteristics)

  • Recommended Product 2:

    TK5R3A06PL(Almost same package but similar characteristics)

供应商型号品牌批号封装库存备注价格
TOSHIBA
24+/25+
6997
原装正品现货库存价优
询价
TOSHIBA
11+
TO-220F
8000
全新原装,绝对正品现货供应
询价
东芝
24+
TO-220F
5000
只做原装公司现货
询价
Toshiba
24+
NA
3423
进口原装正品优势供应
询价
TOS
23+
NA
6550
专业电子元器件供应链正迈科技特价代理特价,原装元器件供应,支持开发样品
询价
TOS
25+23+
NA
7820
绝对原装正品全新进口深圳现货
询价
TOSHIBA
18+
TO-220F
85680
保证进口原装可开17%增值税发票
询价
TOSHIBA/东芝
18+
TO-220SI
41200
原装正品,现货特价
询价
VBsemi(台湾微碧)
2447
TO-220F
105000
50个/管一级代理专营品牌!原装正品,优势现货,长期
询价
TOSHIBA
25+
TO-220
3675
就找我吧!--邀您体验愉快问购元件!
询价
更多TK30A供应商 更新时间2025-12-2 14:30:00