Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN DARL 60V 2A TO220-3

ONSEMI

安森美半导体

WIDE BAND, LOW NOISE OPERATIONAL AMPLIFIERS

Description The single TSH110 and TSH111, the dual TSH112, the triple TSH113 and the quad TSH114 are current feedback operational amplifiers featuring a very high slew rate of 450V/µs and a large bandwidth of 100MHz, with only a 3.2mA quiescent supply current. The TSH111 and TSH113 feature a Stan

文件：424.63 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

2 to 8 GHz WIDE BAND AMPLIFIER CHIP

DESCRIPTION The UPG110B is a GaAs monolithic integrated circuit designed for use as a wide-band amplifier from 2 GHz to 8 GHz. The device is most suitable for the gain stage of microwave communication systems where high gain characteristics are required. The UPG110 is available in a 4 pin flat pa

文件：50.9 Kbytes 页数：8 Pages

NEC

瑞萨

N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET

FEATURES * LOW RDS(ON) - 3Ω

文件：20.08 Kbytes 页数：1 Pages

ZETEX